动态单模InGaAsP/InP内反射干涉半导体激光器

Dynamic-Single-Mode InGaAsP/InP Internal-Reflection-Interference Semiconductor Laser

本文报导了1.3μm InGaAsP/InP内反射干涉型动态单模半导体激光器,器件由质子轰击工艺形成中段耦合干涉腔,最高单模运转调制速率达600 MHz,典型边模抑制比为20∶1。

An 1.3 μm in GaAsP/InP internal-reflection-interference dynamic-single-mode semiconductor laser was developed. Middle-section coupled-interference-cavity was caused by proton bombardment techniques, most high singlemode operation modulation frequencies were up to 600 MHz and a sub-mode suppression ratio of 20 : 1 was obtained.