化学液相沉积法制备Al_xO_y薄膜

Preparation of thin aluminum oxide films by chemical liquid phase deposition

给出了用化学液相沉积法 (CLPD)制备AlxO y/Si薄膜的方法 ,室温下生长 2h得到AlxO y/Si薄膜 ,其退火温度为 10 0 0℃ ,退火时间 2h .对薄膜的显微硬度、成分和结构进行了检测和分析 .结果表明 ,薄膜的显微硬度在退火前为 5 2 0 2 .0N/mm2 ,退火后为 14 5 33.5N/mm2 ,增加近 3倍 ;高温退火去掉了膜内的OH-1,同时使薄膜晶化 ,晶体薄膜的O/Al比例为 1 3.

Chemical liquid phase deposition (CLPD), A novel and simple physicochemical method is proposed preparation of an Al xO yfilm by depositing at room temperature for 2h, and then annealing at 1 000 ℃ for 2h. The film properties studied in detail were the microhardness, crystallographic structure and O/Al ratio. The microhardness of the film is 14 533.5 N/mm 2 after annealing whereas the original hardness value is 5 202.0 N/mm 2. High temperature annealing not only eliminated OH -1 in the film, but also caused the crystallization of the film. O/Al ratio of the film is 1 3.