Si被注入Gd后的磁性及其整流特性的研究

Magnetic properties and rectifying behaviour of silicon doped with gadolinium

采用离子束技术 ,在n型硅基片中注入稀土元素钆 ,制备了磁性 非磁性p n结 .磁性层GdxSi1 -x表现出优良的磁学性能 ,高居里温度 ,高原子磁矩 (利用RKKY模型可以得到解释 ) ,低矫顽力 ,并保持着半导体的属性 ,磁性 非磁性p n结具有整流特性 。

The magnetic/nonmagnetic p-n junction was prepared by implanting gadolinium into the n-type silicon with low-energy dual-ion-beam epitaxy technology. The magnetic layer GdxSi1-x shows excellent magnetic properties at room temperature. High magnetic moment 10mu(B) per Gd atom is observed, which is interpreted by RKKY mechanism. Magnetic/nonmagnetic p-n junctions show rectifying behaviour, but no magnetoresistance is observed.