质子注入MBE碲镉汞n-on-p结性能研究

Study of the current-voltage characteristics of n-on-p junction fabricated by proton-implanted molecular beam epitaxial Hg_(1-x)Cd_xTe

基于中波响应波段的分子束外延碲镉汞薄膜材料成功制备出不同质子注入剂量的大光敏元 ( 5 0 0 μm× 5 0 0 μm)的n on p结构的p n结 ,并对相应的p n结的电流 电压 (I V)特性进行了研究 .质子注入剂量为 2× 10 1 5cm- 2 时R0 A达 3 12 .5Ω·cm2 ,低温热处理后达 490Ω·cm2 .

Large area n-on-p structures of p-n junction with different proton implantation doses are fabricated on the moleculer beam epitaxial grown HgCdTe films for mid-infrared wavelength region. Current-voltage characteristics of the p-n junction are measured at 77K. The zero-bias resistance-area product (R(0)A) of 312.50Omega.cm(2) is obtained when the proton implantation dose is 2 x 10(15) cm(-2), and R(0)A increases to 490Omega.cm(2) after annealing at low temperatures.