摘要
采用液态有机硅源的等离子体增强化学气相淀积设备是通向深亚微米时代的桥梁。介绍研制的液态源化学气相淀积设备的工作原理、结构特点和工艺结果,制备的SiO2薄膜膜厚均匀性±2%,折射率1.452±0.014,生长速率40nm?min。
The Plasma enhanced chemical vapor deposition equipment which use liquid organ ic silicon source is the bridge to sub-micron time.This article introduces the work principle,struc-ture features and process results of liquid source CVD.The film thickness uni formity of made SiO 2 film is±2%.The refractivity is1.452±0.014.The develop ment rate is40nm?min.
出处
《电子工业专用设备》
2003年第3期55-57,共3页
Equipment for Electronic Products Manufacturing
关键词
液态源
等离子体
化学气相沉积
设备
Liquid Source
Plasma
Chemical Vapor Deposition
Equipment
