关于多孔MSQ Dual Damascene蚀刻/灰化工艺——为更低损伤和更低k值的多方面损伤评价和化学性质优化

An extensive damage evaluation and chemistry optimization for lower damage and lowerk-value on Porous MSQ Dual Damascene Etch/Ash process

对铜(Cu)互连系统使用低k值材料时,应解决的许多相关问题不仅有技术问题,而且有所有权成本(CoO)?质量合格(CoC)问题。从蚀刻和灰化(去除)工艺的角度报道了几种问题的解决方法。对蚀刻工艺,将在此推荐Via1st的Duo248TM方法(Duo248TM是Honeywell公司的材料,包含US专利#6,268,457)。对于灰化工艺,建议混合灰化工艺(HybridAshing),即蚀刻和灰化工艺在同一反应室连续进行。这些方法的目标将是65nm以下工艺。

When applying Low-k material to Cu interconnect systems,many issues related not on ly to technology but also CoO?CoC,should be resolved.In this paper,we are reporting so lu tions for several issues from the etching and ashing process point of view.For Etching,Duo248 TM ap-proach(Duo248 TM from Honeywell is covered under US patent #6,268,457)that is sac rificial material for Via1 st approach applied from Honeywell is proposed.For ashing,Hy brid Ash ing that is all in one approach(Etching and Ash ing process same chamber con tinuously)is pro posed.The target of those approaches will be below65nm.