溅射偏压对柔性衬底ITO薄膜结构和光电特性的影响

Deposition of Transparent Conductive ITO Film on Flexible Substrates: Structure and Photoelectric Properties at Different Sputtering Bias-voltage

用磁控溅射工艺,在柔性衬底上,在不同直流偏压条件下,制备了ITO(氧化铟锡)透明导电膜。最佳直流负偏压为40 V,此时制备的薄膜,其自由载流子霍耳迁移率有最大值为89.3 cm2/(V·s),薄膜的电阻率有最小值为6.3104W·cm,在可见光范围内相对透过率为80%左右。X射线衍射谱表明:薄膜为多晶纤锌矿结构,垂直于衬底的c轴具有(222)方向的择优取向,最大晶粒尺寸为55 nm。并重点讨论了薄膜的结构、电学和光学特性与衬底负偏压的关系。

ITO film was deposited on flexible substrates at different DC bias voltage by RF magnetron. The optimum DC bias voltage is 40 V. Of the film prepared at the voltage, the Hall mobility is as high as 89.3cm2/(Vs), resistivity as low as 6.310-4 Wcm and transmittance about 80% in visible range. XRD pattern indicates that the ITO film deposited on organic substrates is of polycrystalline bixbyite structure with a preferred orientation of (222) and the maximum crystal grain size of 55 nm. The effect of the DC bias voltage on the structure and photoelectric properties is discussed.