摘要
通过傅立叶红外光谱(FTIR)和X光电子能谱(XPS)研究了SiH4-NH3-N2体系在不同气体原料比情况下,低压化学气相沉积(LPCVD)SiNx薄膜的化学组成,利用原子力显微镜观察了SiNx薄膜的微观形貌,借助椭圆偏振仪研究了薄膜的折射率.结果表明:当原料气中氨气与硅烷的流量之比(R)较小时(R<2),获得富Si的SiNx薄膜(x<1.33),折射率较高.当氨气远远过量时(R >4),获得近化学计量的的SiNx薄膜(x = 1.33),折射率处于1.95～2.00之间.在适当的工艺条件下,获得的SiNx薄膜H、O含量很低,薄膜表面均匀、平整.
The chemical composition, surface micrograph and refractive index of silicon nitride film (SiNx) grown on silicon wafer from SiH4-NH3-N2 system via low pressure chemical vapor deposition (LPCVD) were characterized by X-ray photoelectron spectroscopy (XPS), Fourier transformed infrared spectroscopy (FTIR), atomic force microscope (AFM) and spectroscopic ellipsometer. The experimental results show that the Si-rich film of SiNx (x <1.33) with higher refractive index at lower ratio of NH3 to SiH4 (R<2) and near stoichiometric SiNx (x =1.33) with refractive index range of 1.95~2.00 at R >4.
出处
《电子元件与材料》
CAS
CSCD
北大核心
2003年第7期14-16,共3页
Electronic Components And Materials
基金
上海市科技发展基金资助项目(00JC14015)
