摘要
提出了一种用于半导体激光器热沉的金刚石膜 / Ti/ Ni/ Au金属化体系 .采用金属化前期预处理、电子束蒸镀技术和后续低温真空热处理 ,金属层和金刚石膜之间获得了良好的结合强度 .AES分析表明 Ti/ Ni/ Au金刚石膜金属化体系中 ,Ni层起到了良好的阻挡效果 ;XRD显示预处理过的金刚石膜 ,镀膜后经过 6 73K,2 h低温真空热处理 ,Ti/金刚石膜界面形成 Ti O和 Ti C;RBS分析进一步证实该金属化体系在 6 73K,1h真空加热条件下具有良好的热稳定性 .采用完全相同的半导体激光器结构 ,金刚石膜热沉的热阻仅为氮化铝热沉的 4 0 % .
A novel Ti/Ni/Au diamond metallization scheme applied in semiconductor lasers for thermal management is reported.The good adhesion strength between metal layers and diamond substrates is obtained using optimum pretreated,electron beam evaporation technique,and post-treatment processing.AES analysis shows that the Ni layer of diamond(C)/Ti/Ni/Au plays an important part in diffusion barrier.XRD indicates that the Ti layer reacts with the pre-fire diamond substrates to form TiC and TiO species on the interface during post-deposition annealing at 673K for 2h in vacuum.Further,RBS confirms that diamond(C)/Ti/Ni/Au is of good thermal stability at 673K for 1h in vacuum.Using a same semiconductor laser scheme,the thermal impedance of diamond thermal management is only 40% of AlN thermal management.
基金
河北省重大科技攻关资助项目 (编号 :95 -97-0 6)~~
关键词
金刚石膜
热沉
金属化
半导体激光器
diamond
thermal management
metallization
semiconductor laser
