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InGaP/GaAs HBT微波功率放大器的设计 被引量:3

Design of InGaP/GaAs HBT Microwave Power Amplifier
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摘要 采用模拟退火算法提取出异质结双极晶体管器件的大信号 Gum mel- Poon模型参数 ,利用所提取出的模型参数设计出具有很低静态功耗的 190 0 MHz两级 AB类功率放大器 .该功放的功率增益为 2 6 d B,1d B压缩点输出功率为 2 8d Bm,对应的功率附加效率和邻近信道功率比分别为 38.8%、- 30 .5 d Bc,1d B压缩点处的各阶谐波功率均小于 - 4 0 d Bc. The method to extract HBT large-signal Gummel-Poon model parameters with simulated annealing algorithm is discussed.These parameters extracted are used for a design of 1900MHz two-stage class AB power amplifier with very low quiescent power consumption.The gain of the P _A is 26dB.Its output 1dB compression point is 28dBm.At this point the power-added efficiency and ACPR are 38 8%,-30 5dBc respectively.All harmonic powers are below -40dBc when P _ out is below 28dBm.
出处 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2003年第7期753-757,共5页 半导体学报(英文版)
基金 国家重点基础研究发展规划 (编号 :2 0 0 0 0 0 683 0 40 3 ) 中国科学院 (编号 :KGX2 -10 1)资助项目~~
关键词 异质结双极晶体管 Gummel-Poon模型 AB类功率放大器 HBT Gummel-Poon model class AB power amplifier
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参考文献5

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同被引文献19

  • 1徐国鼐.6336A甲乙类推挽功放[J].实用影音技术,2005(11):62-64. 被引量:1
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