摘要
在不同注 F剂量条件下 ,对 P沟和 N沟两种不同差分对输入 CMOS运放电路的电离辐照响应进行了研究 .分析比较了注 F和未注 F运放电路电离辐照响应之间的差异 .结果表明 ,在栅场介质注入适量的 F,可有效抑制辐照感生的氧化物电荷尤其是界面态的增长 ,从而提高 CMOS运放电路的抗辐照特性 .
Ionizing radiation effects on fluorinated and no F-implanted CMOS operational amplifiers are investigated,and the difference between the radiation performances is analyzed and compared.The results show that the suit F-implanted can availably control the increase of radiation induced oxide charge especially for interface state so that the capacity of radiation hardness is improved.
关键词
注F
CMOS运算放大器
电离辐照
跨导
fluorinated CMOS Op-Amps
ionizing radiation
transconductance
