射频磁控溅射中离子输运的计算机模拟

Computer Simulation of Ion Transportation in RF Magnetron Sputtering

采用射频辉光放电等离子体壳层模型和蒙特卡罗法 ,模拟了射频磁控溅射镀膜中工作气体离子 (Ar+)的输运过程 ,得到了离子到达靶面时的入射能量、角度和位置。模拟结果 :对靶材溅射的离子主要来自于溅射坑上方的等离子体区域 ,初始离子的位置分布可通过靶材溅射坑的形貌拟合得到 ;离子的能量主要集中在壳层电压附近 ,离子大多数以垂直入射。模拟与实际相符 ,可用作进一步模拟离子对靶材溅射时的输入参数。

Ion transportation in RF magnetron sputtering was simulated with Monte Carlo method.Various calculated parameters of the ions impinging on the target surface,including its energy distribution,its incidence angle and position,can be used in turn as input in target sputtering simulation.The simulated results of argon ions show that the incidence ions mainly come from the plasma region over the sputtered pits on target surface,so its initial spatial distribution can be evaluated by fitting the morphology of the sputtered pits.The energy distribution of the ions centers at the sheath potential and the most of the ions impinge on the target surface in the normal direction.The simulated results agree well with the experimental measurement.