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一种CMOS能隙电压参考源的温度曲率校正设计

A Curvature-corrected CMOS Bandgap Reference
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摘要 介绍了能隙电压源温度曲率校正的概念与原理,设计了一个CMOS工艺的高温校正的电流模式的能隙电压源。电路没有采用运算放大器,从而使设计得到了简化。采用2μmp阱CMOS工艺模型模拟分析,可以发现该参考源在0℃~100℃温度范围内有较好的温度特性。 This paper introduces the curvature-correct conception and principle and gives a CMOS curvature-corrected current bandgap reference according paper. Compared to the traditional bandgap reference, we did not use a OPA, and so the circuit can be simplified. Using this circuit we can compensate the high-temperature character of the traditional bandgap voltage reference in 0-100℃.
出处 《河北工业大学学报》 CAS 2003年第3期5-8,共4页 Journal of Hebei University of Technology
关键词 CMOS工艺 能隙电压源 曲率校正 温度系数 硅的带隙电压 CMOS bandgap voltage reference curvature-corrected bandgap temperature character si bandgap
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参考文献5

  • 1Inyeol Lee, Gyudong Kim, Wonchan Kim. Exponential Curvature-Compensated BiCMOS Bandgap References [J]. IEEE J. Solid-State:Circuits,1994,29:1396-1403.
  • 2Tsividis Y P. Accurate analysis of temperature effects in IC-VBE characteristics with application to bandgap reference sources [J]. IEEE J.Soldd-State Circuits,1980, 15: 1076-1084.
  • 3Bludau W, Onton A, Heinke W. Temperature dependence of the band gap of silicon [J]. J Appl Phvs, 1974, 45 (4) : 1 846-1 848.
  • 4Made Gunawan, Gerard C M, Meijer, etal. A Curvature-Corrected Low-Voltage Bandgap Reference [J]. IEEE J. Solid-State Circuits,1993, 28 (6): 667-670.
  • 5Behzad Razavi. Design of Analog CMOS Integrated Circuits [J]. Mc Graw-Hill, Inc 2001, 381-382.

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