摘要
介绍了能隙电压源温度曲率校正的概念与原理,设计了一个CMOS工艺的高温校正的电流模式的能隙电压源。电路没有采用运算放大器,从而使设计得到了简化。采用2μmp阱CMOS工艺模型模拟分析,可以发现该参考源在0℃~100℃温度范围内有较好的温度特性。
This paper introduces the curvature-correct conception and principle and gives a CMOS curvature-corrected current bandgap reference according paper. Compared to the traditional bandgap reference, we did not use a OPA, and so the circuit can be simplified. Using this circuit we can compensate the high-temperature character of the traditional bandgap voltage reference in 0-100℃.
出处
《河北工业大学学报》
CAS
2003年第3期5-8,共4页
Journal of Hebei University of Technology
关键词
CMOS工艺
能隙电压源
曲率校正
温度系数
硅的带隙电压
CMOS
bandgap voltage reference
curvature-corrected bandgap
temperature character si bandgap