摘要
本文通过分析结型场效应管(JFET)放大器内部不同的噪声源,首次导出了场效应管放大器在较宽频率范围内的等效输入噪声电压表达式,估算了当信号源阻抗为容性时JFET放大器的总噪声,为场效应管电路低噪声优化设计提供有力的工具。
By analyzing the different noise sources of the silicon JFET amplifier, engineering formulae for equivalent noise voltage referred to the input of the JFET amplifier over a wide frequency band are firstly derived. The overall noise of the JFET amplifier is estimated under the condition of capacitive signal source used. Base on this analysis, effective formula is provided to facilitate the low-noise optimized design for the JFET circuit.
出处
《电路与系统学报》
CSCD
2003年第3期132-134,共3页
Journal of Circuits and Systems
基金
国家自然科学基金资助项目(69873015)
