射频Si/SiGe/Si HBT的研究

Studies on RF Si/SiGe/Si HBT

在Si/SiGe/Si HBT与Si工艺兼容的研究基础上,对射频Si/SiGe/Si HBT的射频特性和制备工艺进行了研究,分析了与器件结构有关的关键参数寄生电容和寄生电阻与Si/SiGe/Si HBT的特征频率f_τ和最高振荡频率f_(max)的关系,成功地制备了f_τ为2.5GHz、f_(max)为2.3GHz的射频Si/SiGe/Si HBT,为具有更好的射频性能的Si/SiGe/Si HBT的研究建立了基础。

Based on the process which the Si/SiGe/Si HBT is compatibility with Si, the researches on RF Si/SiGe/Si HBT's RF characterization and its fabrication have been done. The dependence of device characterization frequency fT and maximum oscillation frequency fmax on the key parameters: parasitical resistances and capacitances were analyzed, and these parameters were decided by device construction. RF Si/SiGe/Si HBT is fabricated, whose fT reaches 2.5GHz and ft reaches 2.3GHz. Based on above researches, the better RF Si/SiGe/Si HBT will be made.