摘要
设计并制作了X波段五位GaAs MMIC(微波单片集成电路)数字移相器,采用MESFET作为开关元件,五个移相位线性级联布置。在9～10GHz的频率范围内,用HP-8510网络分析仪测试得到的微波性能表明:移相器的插入损耗为(7.2±1)dB,RMS(均方根)相位误差小于5°,回波损耗优于-13dB。
An X-band 5-bit GaAs MMIC phase shifter using MESFETs as switches has been designed and fabricated, which phase shift bits are cascaded in a linear arrangement. Over 9 GHz to 10 GHz, its microwave performances measured using HP-8510 network analyzer showed that the phase shifter's insertion loss is (7.2±1) dB, and RMS phase error is less than 5° While the return loss is better than-13 dB over the frequency range.
出处
《电子器件》
CAS
2003年第2期229-232,共4页
Chinese Journal of Electron Devices
