分析半导体器件纵向结构参数均匀性

Analysis on the Uniformity of Vertical Structure Parameters for Semiconductor Devices

半导体材料中的缺陷和离子注入掺杂的不均匀性 ,将直接影响器件的主要电参数 ,甚至会降低产品的成品率 ,所以 ,分析半导体器件纵向结构参数的均匀性 ,在生产中起重要作用。进一步而言 ,此类分析能用来检验出直拉硅单晶中存在着的两种缺陷 。

The defects in the semiconductor materials and the non-uniformity caused by ion implantation will directly influence the main electric characteristics of devices, and sometimes, will reduce the yield of the products, so the analysis on the uniformity of vertical structure parameters for semiconductor devices plays a very important role in production. Further more, the analysis can be used for checking out the two kinds of defects induced in the drawing of crystal silicon, and also the analysis can give the detail description of the non-uniformity of doped impurity when the ion implanter scans.