摘要
在集成电路的冷压印光刻中,为了获得高分辨率抗蚀剂,着重对溶剂挥发固化型、化学交联固化型和紫外光照交联固化型材料,从复形分辨率、涂铺均匀性、脱模性、流动性、物理粘度、刻蚀比率、固化速度、固化方式和固化收缩率等方面进行了分析和研究.经过对比,得出低粘度光固化树脂具有薄膜厚度容易控制且均匀(误差为0 3%)、固化速度快(小于0 2min)和固化收缩率小(3%)等特性,其对冷压印光刻工艺的匹配性明显优于溶剂挥发固化型和化学交联固化型材料.因此,最终决定采用低粘度光固化树脂作为冷压印光刻工艺中的抗蚀剂.
Three kinds of resists, which are used in the roomtemperature imprint lithography, are presented. They include solutionevaporation resist, chemical polymerization resist, and ultra violet polymerization resist. In imprint process the performances, i.e. the resolution of pattern transfer, uniform coating, flow behaviour, release, viscosity, and solidifying are researched. The conclusion is that the performances of low viscosity UV curable polymer are characterized by easyadjusting film thickness and flatness (the error is 03%), short solidifying time (the time is less than 02 min), and small shrinkage ratio(3%), and the above mentioned polymer perfectly matches the roomtemperature imprint lithography
出处
《西安交通大学学报》
EI
CAS
CSCD
北大核心
2003年第7期750-753,共4页
Journal of Xi'an Jiaotong University
基金
国家"八六三"计划资助项目 (2 0 0 2AA42 0 0 50 )
国家自然科学基金资助项目 (50 2 751 1 8).
关键词
集成电路
抗蚀剂
冷压印光刻
integrated circuit
resist
room-temperature imprint lithography