摘要
利用泊松方程分析了异质结导带形状 ,通过数值模拟研究了GaAs AlAs异型异质结在不同掺杂浓度下的导带图 。
The conduction band of heterojunction is analyzed by Possin equation. The conduction band edge profiles of GaAs/AlAs with various doping concentration are obtained by using numerical calculation, which indicates the peak position of the conduction band and the width of depletion region.
出处
《曲阜师范大学学报（自然科学版）》
CAS
2003年第3期55-58,共4页
Journal of Qufu Normal University(Natural Science)
