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基于半导体光放大器的开关矩阵级联规模的研究

The cascadability of semiconductor optical amplifier based optical space switches
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摘要 分析了几种基于半导体光放大器的开光矩阵的级联特性 ,结果表明矩阵 -矢量 ( matrix-vactor)开关规模的大小严重受限于大的分光损失 ,波导损失和耦合损失 .然而对于分布增益矩阵 -矢量开关矩阵和 Benes开关矩阵 ,放大自发辐射噪声 ( ASE)的积累和信号的非理想消光比是限制系统级联规模的主要因素 .当信号光功率较大时 ,非理想消光比对级联的规模有大的影响。 The cascadability of Semiconductor optical amplifier (SOA) gates and the size limitations for several kinds of switch architectures based on SOA's are studied theoretically. The analysis shows that the sizes of matrix-vector switches are severely limited owing to the splitting losses, waveguide losses and coupling losses. However for distributed gain matrix-vector switch and Benes switch, the accumulation of amplified spontaneous emission (ASE) noise and non-ideal extinction ratio also greatly influence the maximal sizes of switches. The extinction ratio can greatly influence the cascade number of SOA's at high input power.
出处 《云南师范大学学报(自然科学版)》 2003年第4期38-41,共4页 Journal of Yunnan Normal University:Natural Sciences Edition
基金 云南师范大学青年基金资助项目 ( 2 0 0 2 0 2 6)
关键词 半导体光放大器 光开关矩阵 级联规模 光通信网 放大自发辐射噪声 增益饱和 消光比 Semiconductor optical amplifier optical switch ASE noise gain saturation extinction ratio
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  • 1T. Kato, J. Sasaki, T. Shimoda, H. Hatakeyama,T. Tamanuki, S. Kitamura, M Yamaguchi, T.Sasaki, K. Komatsu, M. Kitamura and M. Itoh.Hybrid Integrated 4 × 4 Optical Matrix Switch Module on Silica Based Planar Waveguide Platform[J].IEICE Trans. Electron, 1999, E82--C: 305 -- 312.
  • 2R.F. Kalman, L.G. Kazovsky and J. W. Goodman. Space division switches based on semiconductor optical amplifiers [J]. IEEE Photon. Technol.Lett., 1993,4:1048--1051.
  • 3E. Almstrom, C. P. Larsen, L. Gillner, W.H. van Berlo, M. Gustavsson, and E. Berglind. Experimental and analytical evaluation of packag4× 4 InGaAsP/InP semiconductor optical amplifier gate switch matrices for optical networks [J]. J. Lightwave Technol. 1996,14 : 996-- 1004.
  • 4J. Yao, and M. O'Mahony. Impact of gain saturation on size limitations of semiconductor laser amplifier(SLA) based switching structures [J]. IEEE Photon. Technol. Lett. ,1995, 7:176--178.
  • 5A. Ehrhardt, M. Eiselt, G. Grossopf, L. Kuller,R. Ludwig, W. Pieper, R. Schnabel, and H. G.Weber. Semiconductor laser amplifier as optical switching gate [J]. J. Lightwave Technol, 1993,11:1287--1295.
  • 6Y. Shibata. K. Yamada, K. Habara, and N. Yoshimoto. Semiconductor laser diode optical amplifiers/gates in photonic packet switching[J]. J. Lightwave TechnoI, 1998,16 : 2228-- 2235.
  • 7N. Sahri, D. Prieto, S. Silvestre, D. Keller, F.Pommerau, M. Renaud, O. Rofidal, A. Dupas,F. Dorgeuille, and D. Chiaroni. A highly integrated 32--SOA gates optoelectronic module suitable for IP multi--terabit optical packet routers[C]. OFC 2001,Vol. 4.
  • 8M. Gustavsson, B. Lagerstrom, L. Thylen, M.Janson, L. Lundgren, A.C. Morner, M. Rask and B. Stoltz. Monolithically integrated 4×4 InGaAsP/InP laser amplifier gate switch arrays[J]. Electron.Lett. , 1992,28: 2223--2225.

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