摘要
概述了CVD -Si3N4 陶瓷及其复合材料在干燥氧气下的氧化行为。Si3N4 陶瓷在高温下氧化时 ,除生成SiO2 保护膜外 ,还生成一薄层比SiO2 膜更优异的氧气扩散阻挡层 (Si -O -N化合物层 ) ,该层具有优异的抗氧化性能。介绍了两种氧化机制模型 ,同时分析了温度、杂质等对CVD -Si3N4
This paper reviews the oxidation behavior and oxidation modes of CVD Si 3N 4 ceramic in dry oxygen.At high temperature,Si 3N 4 is oxidized to form a thin layer of silicon oxynitride (Si O N) as an excellent oxygen barrier in addition to silica (SiO 2) film formation.Two types of oxidation mode are described.Furthermore,the effect of temperature and impurity on oxidation behavior of CVD Si 3N 4 is also analyzed.
出处
《宇航材料工艺》
CAS
CSCD
北大核心
2003年第3期13-16,共4页
Aerospace Materials & Technology
