金属预置层后硒化法制备的CuInSe_2薄膜结构特性研究

STUDY ON STRUCTURE PROPERTIES OF CuInSe_2 THIN FILMS BY ALLOYS PRECURSORS POST-SELENIZATION

CuInSe2 (简称CIS)薄膜是太阳电池吸收层的重要材料。利用连续溅射金属层后硒化法制备CuInSe2 薄膜。薄膜的XRD图样显示 :CuInSe2 薄膜的形成与制备条件密切相关 ;在较大Cu、In原子比的范围内 ,在一定的硒化条件下 ,都可以形成以CuInSe2 为基体的薄膜。SEM图样显示 ,不同Cu/In比值的表面形貌有较大的不同。Cu/In接近 1时 ,薄膜的表面形貌均质且颗粒致密。Raman谱图显示 ,Cu、In配比不当会使薄膜中出现少量的杂相组织 ,在 6 32 .8nm激发波波长下 ,还有 2 10cm-1和 2 2 9cm-1两处的特征峰。通过光吸收测量得到CuInSe2 的带隙是 1.0 5eV ,通过电导率测量得到其激活能为 0 .4 86eV。

The CIS thin films were fabricated by alloy precursors post-selenization. The experimental investigation on the structures and characterizations of CIS thin films were carried out. The XRD analysis reveals that the post-selenization temperature is very important for forming a CIS thin film and also the thin films are CIS mainly in a proper selenizing conditions when the range of Cu/In is from 0.98 to 2.34. Raman spectrum analysis reveals that there are 210 cm-1 peak and 229 cm-1 peak except the 174 cm-1 peak. The 260 cm-1 peak shows the character of a Copper-rich thin film. The peak position and intensity depend on the ratio of Cu/In. These variations of characteristic peak maybe correspond to heterophase materials. The optical and electrical character measurements show that the band gap is l.05 eV while Cu/In=0.98. The activity energy is 0.486 eV.