用开路电压法测硅太阳电池中少数载流子寿命

MEASUREING MINORITY CARRIER LIFETIME IN SILICON SOLAR CELLS BY OPEN CIRCUIT VOLTAGE DECAY (OCVD)

太阳电池基区的少数载流子寿命是影响电池效率的重要因素之一。开路电压衰减法 (OCVD)具有直接、简单、重复性好等特点 ,可准确测量器件的少数载流子寿命。该文分别介绍了利用纳秒激光器和发光二极管 (LED)作为OCVD的光源 ,测量晶体硅太阳电池的少子寿命 ,结果发现可以利用脉冲信号发生器带动发光二极管作为脉冲光源 ,取代纳秒激光器 。

The minority carrier lifetime ( τ ) in the base region of a solar cell is one of the most important parameters that affects the conversion efficiency of the device. Open circuit voltage decay (OCVD) is attractive in the measurement of the minority carrier lifetime in the devices due to its straight,easy operation and good repeatability. In this paper we compare the minority carrier lifetimes from nanosecond laser and pulsed generator source,the results indicate that we can use a pulsed generator source with LED instead of nanosecond laser when we measure the minority carrier lifetime of monosilicon solar cells and polysilicon solar cells.