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半导体晶片Fe/Ni玷污的紫外荧光谱研究

STUDY OF Fe/Ni CONTAMINATION IN SEMICONDUCTOR WAFER BY ULTRAVIOLET FLUORIMETRY
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摘要 针对Si,GaAs半导体晶片中金属杂质玷污的问题,本文提出了紫外光致荧光谱的检测方法。常温下,晶片中的Fe,Ni杂质玷污可产生紫外特征荧光峰。这种新的检测方法是非破坏性的,并适用于φ76.2mm,φ100mm大圆片的直接检验,而且具有较高的检测灵敏度。 For the problem of metal impurity contamination in semiconductor wafer Si and GaAs has been puted forth ultraviolet-induced fluorimetry in this paper. The results show that some impurities such as Fe and Ni have characteristic peak wavelength at room temperature. This new method is not only nondestructive but also applicable to examined of large wafers in diameter 76.2 mm or 100 mm, and has high sensitivity.
出处 《江西大学学报(自然科学版)》 1992年第1期53-58,共6页
关键词 紫外光致荧光 半导体晶片 金属杂质 ultraviolet-induced fluorescence, Fe contamination in silicon, purged wafers, non-da-mage detection
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  • 1保田和雄,充川吉之助著,何华〓著,黄汉国.高灵敏度原子吸收光谱和发射光谱分析法[M]原子能出版社,1982.
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