摘要
在SF6气体氛围内用飞秒激光照射硅表面 ,可在硅表面产生准规则排列的微米量级尖峰结构 ,形成“黑硅”新材料 .初步研究表明 ,这种“黑硅”新材料对波长为 2 5 0— 2 5 0 0nm的光波有大于 90 %的吸收 ,同时它还具有相当好的场致发射特性 .由于具有这些奇特的光电性质 ,这种表面微构造的硅材料在光电探测器、太阳能电池、平板显示器等器件制造领域有着重要的潜在应用价值 .
Arrays of sharp spikes have been formed on the surface of silicon by cumulative femtosecond laser pulse irradiation in an SF 6 atmosphere. The absorbance of light by silicon with a microstructured surface is approximately 90% throughout the region from the ultraviolet (250nm) to the near infrared (2500nm). The sharp spikes formed on the surface using femtosecond laser-chemical etching are also good field-emitters. With its amazing optoelectronic properties, surface microstructured silicon shows promising potential applications in the manufacture of solar cells, optoelectronic detectors, flat displays and so forth.
出处
《物理》
CAS
北大核心
2003年第7期455-457,共3页
Physics
基金
国家自然科学基金 (批准号 :60 0 760 2 5 )
上海市科技发展基金(批准号 :0 1JC14 0 10 )资助项目