Quantum Well Intermixing of InGaAsP QWs by Impurity Free Vacancy Diffusion Using SiO_2 Encapsulation

使用SiO_2介质膜实现InGaAsP量子阱混杂(英文)

Experiment on quantum well intermixing (QWI) of InGaAsP QWs by impurity free vacancy diffusion (IFVD) using SiO 2 encapsulation is reported.A maximum band gap wavelength blue shift as large as 200nm is realized.Furthermore,an FP laser blue shifted 21nm by QWI is fabricated with characteristics comparable with the as grown one.

报道了使用SiO2 介质膜导致的无杂质空位扩散实现InGaAsP多量子阱混杂的实验 ,得到 2 0 0nm的最大带隙波长蓝移 .另外 ,采用量子阱混杂制作了蓝移的FP腔激光器 。