摘要
通过实验优化AlN(氮化铝)瓷料配方及排胶工艺,对共烧W(钨)导体浆料性能及AlN多层基板的高温共烧工艺进行了研究,并对AlN多层基板的界面进行了扫描电镜分析。采用AlN流延生瓷片与W高温共烧的方法,成功地制备出了高热导率的AlN多层陶瓷基板,其热导率为190 W/(m·K),线膨胀系数为4.6106℃1(RT^400℃),布线层数9层,W导体方阻为9.8 m,翘曲度为0.01 mm/50 mm,完全满足高功率MCM的使用要求。
The multilayer AlN substrates of high thermal conductivity were obtained by optimizing the ceramic composition, binder-burning process and the technology for cofiring the AlN casting green tape with W at high temperature. Of the substrates, the thermal conductivity is 190 W/(mK), the thermal expansion coefficient (from room temperature to 400℃) 4.6×10-6℃-1, the conductive layer number nine, sheet resistance of W conductor 9.8 mW, the substrate camber 0.01 mm/50mm The AlN multilayer ceramic substrates meet the power MCM requirements.
出处
《电子元件与材料》
CAS
CSCD
北大核心
2003年第8期25-28,共4页
Electronic Components And Materials
关键词
氮化铝
共烧工艺
多层基板
aluminum nitride
cofiring
multilayer substrates
