摘要
研究了SiC薄膜的制备及其压阻特性.利用热丝化学气相沉积(HFCVD)法在硅(111)晶面制备SiC薄膜,对制备的薄膜进行X射线衍射分析和其它测试.结果表明:SiC薄膜晶向取向一致,薄膜生长速率为3 μm / h,厚度约为5 μm.同时,利用高阻仪研究该薄膜的压阻特性,测得应变量(ε)在(2~6)×10-4范围内,电阻的相对变化量(ΔR@R-1)和压阻灵敏度因子(k)随应变量(ε)的变化曲线.结果表明该薄膜有明显的压阻效应.
Silicon carbide thin films and their piezo-resistive effect properties was investigated. The film prepared on Si (111) by hot filament chemical vapor deposition has been measured by XRD and other means. The results show that of the film, the structure is mono-crystalline, growth rate 3 mm/h and thick 5 mm. The piezo-resistive effect properties of the film are investigated by high resistor measure devices. DR/R-e characteristic and k-e characteristic (from 2×10-4 to 6×10-4, at room temperature) are obtained. They show that the film exhibits remarkable piezo-resistive effect.
出处
《电子元件与材料》
CAS
CSCD
北大核心
2003年第8期29-30,34,共3页
Electronic Components And Materials
关键词
碳化硅
压阻效应
薄膜
silicon carbide
piezo-resistive effect
thin film
