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双极型开关晶体管延时模型和带负载能力研究

Study on the time delay model of the bipolar switching transistor and its loading capability
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摘要 从埃伯斯-摩尔模型出发,较为详细地介绍了双极型开关晶体管开关时的物理过程,用电荷控制法计算了开关晶体管的各个延时参数,阐明了器件工艺参数及外电路参数与延时、电路带负载能力的关系,指出了在器件或集成电路工艺中如何来保证器件有较短的延时和较强的带负载能力. Based on the EbersMoll Model, the physical procedure is described when the bipolar switching transistor switches. All of the delay parameters calculated by the method of ChargeControlled are illustrated. The relation between the delay parameters, loading capability and the parameters of the device process and circuits are indicated. At last, it is referred that how to produce a device with a short delay and a high loading capability .
出处 《苏州大学学报(自然科学版)》 CAS 2003年第3期48-55,共8页 Journal of Soochow University(Natural Science Edition)
关键词 双极型开关晶体管 延时模型 带负载能力 埃伯斯-摩尔模型 电荷控制法 电子 空穴 bipolar transistor time delay model excess minority-carrier(electron) excess majority-carrier(hole) sinking current loading capability
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参考文献3

  • 1KINGSTON R H. The switching time in junction diodes and junction transistors [J]. IRE, 1954,42:829 -835.
  • 2BEAUFOY R, SPARKES J J. The junction transistor as a charge-controlled device[J]. ATE, 1957,13:310-315.
  • 3SZE S M. Physics of Semiconductor Devices[M]. New York:John Wiley & Sons, 1981.

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