槽栅结构对小尺寸MOS器件特性的影响

The Influence of Grooved-gate Structure on the Property of Small Size MOSFET’s

基于流体动力学能量传输模型,研究了深亚微米槽栅结构MOSFET对小尺寸效应的影响,并与相应平面器件的特性进行了比较。研究结果表明,由于栅介质拐角效应的存在,槽栅结构在深亚微米区域能够很好地抑制小尺寸带来的短沟道效应、漏感应势垒降低等效应,且很好地降低了亚阈特性的退化,器件具有较好的输出特性和转移特性。

Based on the hydrodynamic energy transport model,the influence of the grooved-gate structure on the characteristic of deep-sub-micron MOSFET's is studied,and the results are compared with those of the corresponding conventional planar devices.Because of the concave corner effect of the gate insulator,the short-channel-effect and the drain-induced-barrier-lowering originating from small size can be suppressed in deep-sub-micron grooved-gate MOSFET's,and the degradation of the sub-threshold swing is depressed better than the planar devices.