摘要
研究应用O2反应离子刻蚀(RIE)直接深刻蚀商用有机玻璃(PMMA)片,以实现微结构的三维微加工,工艺简单,加工成本较低,为微器件的高深宽比加工提出了新方法。试样采用Ni作掩膜,以普通的光刻胶曝光技术和湿法刻蚀法将Ni掩膜图形化。工作气压、刻蚀功率等工艺参数对刻蚀速率影响较大。在刻蚀过程中,掩膜上的金属粒子会被刻蚀气体离子轰击而溅射散落出来,形成微掩膜效应。利用这种RIE技术,在适当的溅射功率及气压下,刻蚀速率较快,且获得了较陡直的微结构图形,刻蚀深度达120μm。
In this paper, deep reactive ion etching of commercial polymethylmethacrylate(PMMA) to fabricate microstructures is studied The process is simple and cost low We put forward a new reactive ion etching technique for high aspect ratio micromachining We use Ni as mask that is patterned by chemical etching, a general photoresist technology The process parameters (O2 pressure, etching power etc) have a large effect on the etching ratio During reactive ion etching PMMA, metal atoms on Ni mask sputter out, which are bombarded by plasma,and cause micromask effect Under moderate RF power and gas pressure, we use this technology to deep RIE PMMA Etching ratio is fast and a vertical sidewall microstructure is achieved with etching height of 120 μm
出处
《压电与声光》
CSCD
北大核心
2003年第3期249-251,共3页
Piezoelectrics & Acoustooptics
基金
国家自然科学基金资助项目(50075055)