摘要
本文利用计算机程序简单模拟了圆盘状加热器和圆筒状加热器的热场分布 ,研究了热场对雾化裂解CVD法生长的半导体薄膜厚度均匀性的影响 ,并采用雾化裂解CVD技术制备了高度c轴取向的ZnO薄膜。实验结果表明利用圆筒形加热器及对衬底位置的控制可以在较小的加热器内获得相对尺寸大、厚度均匀性较好ZnO薄膜。
Hot zone distribution of disk\|like heaters and muff heaters were simulated by computer.Optimized heater shape and substrate positions were suggested according to the results of calculation.As an example,the influence of hot zone on the thickness uniformity of ZnO thin films deposited by nebulized pyrolisys CVD was studied in this paper.Experiment results show that ZnO films with relatively large area and good thickness uniformity can be prepared by control of the substrate position in the muff heater.
出处
《材料科学与工程学报》
CAS
CSCD
北大核心
2003年第4期494-497,共4页
Journal of Materials Science and Engineering
基金
国家重点基础研究专项(973)资助项目 (G2 0 0 0 0 683 0 6)