摘要
以高纯石墨作靶、CHF3/Ar作源气体采用反应磁控溅射法制备出了氟化类金刚石 (F -DLC)薄膜。拉曼光谱表明 ,CHF3相对流量的增加会引起薄膜的D峰与G峰强度之比I(D) /I(G)减小 ,晶粒增大 ,芳香环结构比例下降。红外吸收光谱分析证实了这些推论 ,指出这是由于薄膜中氟含量上升的结果。
The F DLC films were prepared by reactive magnetron sputtering with trifluromethane(CHF 3) and Ar as source gases and pure graphite as a target. The intensity ratio I(D)/I(G) of Raman bands of disordered graphite(D band) and graphite(G band) of F DLC films decreases with the increasing of source gas flow ratios CHF 3/Ar which is indicative of an decrease of the fraction of aromatic ring. The infrared absorption spectrum proves that and reveals that these are just due to an increase in the content of fluorine atoms in the films.
出处
《材料科学与工程学报》
CAS
CSCD
北大核心
2003年第4期539-541,共3页
Journal of Materials Science and Engineering
基金
国家自然科学基金资助项目 (1 0 1 750 4 8)
