期刊文献+

用基片曲率法测量薄膜应力 被引量:6

Stress Measurement of Thin Films by Substrate Curvature Method
下载PDF
导出
摘要  采用基片曲率法设计和制作了一种测量薄膜应力的装置,它具有简单、无损伤、快速、易于操作、精度高的优点。使用该装置测量了射频磁控溅射镀制的Cu单层膜和Ag/Cu多层膜的应力,结果表明薄膜残余应力是均匀的,但随沉积条件不同而不同。Cu单层膜和Ag/Cu多层膜处于压应力状态,外加-200V偏压时,Ag/Cu多层膜则转变为很小的拉应力状态。XRD表明Ag/Cu多层膜已结晶,呈现Ag(111)/Cu(111)择优取向。 An optical apparatus based on substrate curvature method (SCM) was developed for stress measurement of thin films, which offered a lot of advantages as simple structure, nondestructive, quick response, easy operation and high precision. Using the apparatus, the stress in Cu films and Ag/Cu multilayer thin films prepared by RF magnetron sputtering were detected. It was found that the residual stress in these films was homogenous, but varied with the deposition condition. Commonly samples of these films were in a state of compression, but when an additional bias of -200V was imposed on one of them, it turned to present a small tensile stress. The XRD pattern showed that Ag/Cu multilayer thin films were crystallized, and exhibited Ag(111)/Cu(111) preferred orientations.
出处 《材料保护》 CAS CSCD 北大核心 2003年第7期13-15,共3页 Materials Protection
基金 国家自然科学基金资助项目(59971021)
关键词 基片曲率法 薄膜 残余应力 substrate curvature method thin film residual stress
  • 相关文献

参考文献11

  • 1胡一贯,乐德芬,陈宁伟.用激光干涉法分析薄膜应力[J].中国科学技术大学学报,1992,22(2):204-208. 被引量:6
  • 2Ohring M. The materials science of thin films[M]. London: Academic Press Inc., 1992.
  • 3Sanjurjo J A, Lópcz-Cruz E, Vogl P, et al. Dependence on Volume of the Phonon Frequencies and the Infrared Effective Charges of Several Ⅲ - V Semiconductors[ J ]. Phys Rev B, Condens Matter, 1983,28 (8) : 4579 -4584.
  • 4Flinn P A, Gardner D S, Nix W D. Measurement and interpretation of stress in aluminum - based metallization as a function of thermal history[J]. IEEE Trans Electron Dev, 1987, ED34:689- 699.
  • 5Brantiey W A. Calculated elastic constants for stress problems associated with semiconductor devices[ J]. J Appl Phys, 1973,44( 1 ) : 534 - 535.
  • 6Zhang T J, Wong M S, Sproul W D, et al. Characterization of magnetron sputtering TiB2 and Ti-B-N thin films[J] .Tran Nonferrous Met Soc China,2000,10(5) :619 - 624.
  • 7Rossnagel S M, Gilstrap P, Rujkorakarn R. Stress measurement in thin films by geometrical optics[J]. J Vac Sci Technol,1982,21(4):1045 -1046.
  • 8Keller R-M, Baker S P, Arzt E. Stress-temgerature behavior of unpassivated thin copper films[J]. Acta Mater, 1999,47(2) :415 - 426.
  • 9Weiss D, Gao H, Arzt E. Constrained Diffusional Creep in UHV- produced copper thin films[J]. Acta mater,2.001,49:2395 - 2403.
  • 10Shull A L , Spaepen F . Measurements of stress during vapor deposition of copper and sliver thin films and muhilayers[J]. J Appl Phys, 1996, 80(11): 6243-6256.

二级参考文献1

  • 1晋琦,电子学报,1985年,5期,56页

共引文献5

同被引文献31

引证文献6

二级引证文献16

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部