摘要
通过对一种微分量子效率可以大于 1的新型多有源区隧道再生应变量子阱垂直腔面发射半导体激光器 (VCSELs)结构 ,以及由此设计出的阈值电流更小、输出功率更大的器件与普通结构在反射率及注入电流都相同的条件下输出功率大小的比较及阈值电流密度大小的比较 ,从而在理论上证实了这种VCSELs新型结构的优势。
A novel multiple-active-region tunneling regenerated strained-quantum-well vertical-cavity surface-emitting laser(VCSEL),whose differential quantum efficiency is larger than unity and whose performance is expected to be improved,especially the threshold current is expected to be reduced and the output power is expected to be increased,was designed.Then the output power,threshold current of the novel structure and those of the traditional structure were compared under the conditions of the same reflectivity and injected current.So the advantages of the novel structure have been proved in theory.
出处
《激光技术》
CAS
CSCD
北大核心
2003年第4期325-327,共3页
Laser Technology
基金
国家自然科学基金
国家重点基础研究与发展规划项目
北京市科委高科技资助项目
关键词
多有源区
隧道再生
VCSELS
DBR反射率
multiple-active-region
tunneling regenerated
vertical-cavity surface-emitting lasers(VCSELs)
DBR reflectivity