摘要
采用高灵敏度的micro Raman系统研究了多孔硅(PS)在纵向的Raman效应,并研究了多孔硅尺寸对Raman谱的影响.实验中采用脉冲电化学腐蚀和直流电化学腐蚀两种方法制备PS样品,纵向Raman光谱的结果表明,在纵向不同深度,用脉冲电化学腐蚀方法制备的PS,Raman光谱不存在频移,而用直流电化学腐蚀方法制备的PS在多孔层深度为70~90μm处的Raman光谱有向低波数方向约40cm-1的移动,它是由于常规电化学腐蚀方法制备的PS不同深度的尺寸分布对量子效率的影响引起的.
Vertical Raman effects of the PS are studied by using the highly sensitive microRaman system. The effects of the PS size on the Raman spectra are also studied. PS samples in the experiments are prepared by means of both the DC electroetching and pulse electroetching. Results of the vertical microstructure show that at various depths between 70~90 μm beneath the DCetched PS surface there exists a 4 cm-1 shift towards the lower frequency side of the Raman spectrum. This is caused by the effect of the DCetched PS size at various depths on the quantum effect.
出处
《长沙电力学院学报(自然科学版)》
2003年第3期67-69,共3页
JOurnal of Changsha University of electric Power:Natural Science
基金
国家自然科学基金资助项目(19525410)