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MgB_2超导薄膜的化学气相沉积 被引量：1

CHEMICAL VAPOR DEPOSITION OF SUPERCONDUCTING MgB_2 THIN FILM
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摘要 探索了采用化学气相沉积法,在LaAlO3单晶基片上原位制备了MgB2超导薄膜。X射线衍射(XRD) 分析表明薄膜的相纯度不理想,扫描电子显微镜(SEM)观察表明薄膜的表面比较粗糙,用标准四引线法测得 薄膜的起始转变温度(Tc onset)为30K,零电阻温度(Tc0)为18K。 Superconducting MgB2 thin film was successfully in situ deposited onto single crystal LAO (LaAlO3) substrate by chemical vapor deposition. There existed several kinds of impurities in the result-ant thin film by XRD analysis. The surface morphology of this thin film was very rough by SEM observa-tion. The superconducting onset transition temperature and zero resistance temperature of this thin film were confirmed to be 30 K and 18 K, respectively by Standard four-probe measurement.
作者 迟振华 王天生 漆汉宏 于栋利 何巨龙 刘世民 田永君 李东春
机构地区 燕山大学
出处 《物理测试》 CAS 2003年第4期3-5,共3页 Physics Examination and Testing
基金 国家自然科学基金(No.50171058)资助项目
关键词 二硼化镁 超导薄膜 化学气相沉积 原位反应 XRD SEM 起始转变温度 MgB2, superconducting thin film, chemical vapor deposition, in situ
分类号 O484.4 [理学—固体物理]
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参考文献12

  • 1W. N. Kang, H.J. Kim, E.M. Choi, et al. MgB2 Superconducting Thin Films With Transition Temperature of 39 Kelvin.Science, 2001,292:1521 - 1523.
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同被引文献28

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物理测试
2003年 第4期

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