DSOI,SOI和体硅MOSFET的特性测量比较

Comparison of the characteristics of DSOI, SOI and bulk-Si MOSFETs

严重的自热效应和浮体效应是绝缘体上硅(SOI)器件的主要缺点。绝缘体上漏源(DSOI)结构的提出就是为了抑制SOI器件中的这两种效应。为了实现DSOI器件结构并且研究DSOI器件的特性,和SOI器件与体硅器件进行对比,采用新型的局域注氧工艺成功地在同一管芯上制作了DSOI、体硅和SOI3种结构的器件。通过对3种结构器件的电学特性和热学特性的测量比较,证明了DSOI器件成功地抑制了浮体效应,并且大大降低了自热效应。由于DSOI器件漏、源区下方埋氧层的存在,在消除了SOI器件严重的自热效应和浮体效应的同时,保持了SOI器件相对体硅器件的电学特性优势。DSOI器件成功地结合了SOI器件和体硅器件的优点,并且克服了两者的缺点,是一种很有希望的高速低功耗新器件。

The drain and source on ins ul ator (DSOI) structure was proposed to suppress floating body effects (FBEs) and the severe self-heating effect in SOI devices, which are the main drawbacks of the SOI structure. The DSOI structure was investigated using a local oxygen imp lantation process to successfully fabricate DSOI, bulk-Si and SOI MOSFETs on th e same die. Measurements of their electrical and thermal characteristics showed that the DSOI devices successfully suppressed the FBEs and that the self-heatin g effect of the DSOI devices was much less than in the SOI devices. In addition the electrical advantages of the SOI devices over the bulk-Si devices remained in the DSOI devices because of the buried oxide layer below the drain and source region. Therefore, the DSOI devices combine the advantages of SOI and bulk-Si devices as promising designs for high-speed, low-power applications.