摘要
提出了一种测量电吸收调制器和激光器集成器件芯片散射参数的新方法 .根据电吸收调制器和封装寄生参数的等效电路模型 ,对测量的反射系数进行拟合 ,得到封装寄生参数和电吸收调制器的等效电路元件的参数值 .通过分析发现测试封装寄生参数对电吸收调制器的测试结果有很大影响 .去除了封装寄生参数的影响后 。
A new method of measuring the real scattering par ameters of electroabsorption modulated DFB laser is presented.According to the equivalent circuit model of parasitic parameters of the submount,bond wire and intrinsic parameters of the electroabsorption modulated DFB laser,the measured data are modeled and those parameters are extracted.It is presented that the parasitic parameters have large effects on the true measurement of the device.After the effects of the parasitic parameters are eliminated,the real frequency responses of the device can be obtained.
基金
国家"8 6 3"(Nos.2 0 0 1AA312 0 30
2 0 0 1AA312 190 )
"973"(No .G2 0 0 0 0 36 6 0 1)
国家杰出青年基金 (批准号 :6 982 510 9)资助项目~~
关键词
电吸收调制器
集成光电器件
分布反馈激光器
散射参数
测量
electroabsorption modulator
integrated optoelectronic device
scattering parameter
measurement
