摘要
介绍了一种对具有电阻场板的薄膜SOI LDMOS的精确解析设计方法 .在对电场分析的基础上 ,提出了新的电离率模型 ,并求出了电离率积分的准确路径 ,进而得到击穿电压、漂移区掺杂、漂移区长度与SOI硅层厚度、埋氧层厚度的关系 .模拟结果表明 ,解析与模拟结果具有很好的一致性 ,而且设计的器件具有击穿电压大、比导通电阻极小的优点 .
Accurate analytical design of thin-film SOI-LDMOS combined with resistive-field-plate is proposed.A new ionization rate model and the accurate route of the integral of it are achieved,which lead to an analytical result relating the breakdown voltage,impurity concentration and length of drift region to material parameters such as thickness of silicon layer and buried oxide.The analytical results are in good agreement with the numerical results achieved by the simulation tool TMA/MEDICI.By using this analytical theory,a much low specific on-resistance and high breakdown voltage LDMOS can be realized on the thin-film SOI substrate.
基金
国家自然科学基金资助项目 (批准号 :6 9776 0 4 1)~~
关键词
SOI
电阻场板
横向双扩散MOS管
埋氧层
电离率
击穿电压
比导通电阻
silicon-on-insulator
resistive field plate
lateral double diffusion MOS
buried oxide
ionization rate
breakdown voltage
specific on-resistance
