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MOSFET模型&参数提取 被引量:8

MOSFET Models and Parameter Extraction
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摘要 器件模型及参数作为工艺和设计之间的接口 ,对保证集成电路设计的投片成功具有决定意义。本文介绍了电路模拟中常用的几种MOSFET模型 ,并着重探讨了使用自动参数提取软件提取一套准确的模型参数的具体工作步骤。 As interface of IC process and design, device models and their parameters are very important for ensuring a successful inflow of IC design. In this article, some MOSFET models that are usually used in circuit simulation are introduced, and actual steps that need be done when using automatic parameter extraction software to extract aset of accurate device model parameters areemphatically discussed.
出处 《微电子技术》 2003年第4期23-28,38,共7页 Microelectronic Technology
关键词 MOSFEX BSIM 模型 参数提取 MOSFET BSIM Model Parameter extract
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参考文献4

  • 1N. Arora, MOSFET Models for VLSI Circuit Simulation:Theory and Practice, Springer- Verlag, 1993.
  • 2J.J. Liou A. Ortiz - CondeEGarcia - Sanchez, Analysis and Design of MOSFETS: Modeling, Simulation, and Parameter Extraction, KLUWER ACADEMIC PUBLISHERS,1998.
  • 3Yuhua Cheng and Chenmmg Hu, MOSFET MODELS & BSIM3 USER'S GUIDE, KLUWER ACADEMIC PUBLISHERS, 1999.
  • 4William Liu, MOSFET models for SPICE simulation:including BSIM3v3 and BSIM4, J. Wiley & Sons, Inc, 2001.

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