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CMP/Post CMP工艺及其设备 被引量:7

The CMP/Post CMP Technology and Its Eguipment
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摘要 对CMP市场、Cu-CMP、低k-CMP、STI-CMP、W-CMP和PostCMP工艺及其设备进行了论述;并介绍了CMP所要求的研磨膏和研磨垫。 In this paper,the CMP market,Cu-CMP,Low k-CMP,STI-CMP,W-CMP and post CMP tech-nology and it eguipment are introducted.The slurry and Pad for CMP are described also.
作者 翁寿松
出处 《电子工业专用设备》 2003年第4期9-12,55,共5页 Equipment for Electronic Products Manufacturing
关键词 化学机械抛光 平坦化 市场 设备 CMP Planarization Market Eguipment
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参考文献12

  • 1童志义.高密度封装技术现状及发展趋势[J].电子工业专用设备,2000,29(2):1-9. 被引量:14
  • 2葛劢冲.CMP系统技术与市场[J].电子工业专用设备,2003,32(1):17-24. 被引量:2
  • 3莫大康.2002年的全球半导体设备工业[J].集成电路应用,2003,20(6):66-68. 被引量:1
  • 4Katsayoshi Ina. New Solution Path For Cu/LOw -κ CMP Process for a Low Cost of Ownership[A]. SEMICON China 2003 CMP Technical symposium [C].Shanghai:SEMICON,2003.113-118.
  • 5Yuz-huo LI. Abrasive particle Innovation for Copper CMP[A]. SEMICON China 2003 CMP Technical Symposium[C].Shanghai: SEMICON, 2003.3-7.
  • 6Jong-heum LIM. Development and Application of The Slurry Including Colloidal Silica and Hydrogen Peroxide for Copper CMP [A]. SEMICON China 2003 CMP Technical Symposium[C]. Shanghai: SEMICON, 2003. 142-149.
  • 7Tomohisa Konno. Specially Designed Abrasives for Cu CMP slurry [A]. SEMICON China 2003 CMP Technical Symposium[C]. Shanghai: SEMICON, 2003. 131-136.
  • 8Guang-wei Wu, Thomas E. Hard porous Pad for Cu CMP[A]. SEMICON China 2003 CMP Technical Symposivm[C].Shanghai: SEMICON, 2003.95-100.
  • 9Brian Ha,Sang-Iek Lee. Ceria Based CMP Slurry Defect Reduction Clsing Microfiltration [A]. SEMICON China 2003 CMP Technical Symposivm[C]. Shanghai: SEMICON,2003. 163-166.
  • 10Michael R.Oliver.New pad and subpad staeks For CMP:Uniformity and Planarization [A]. SEMICON China 2003 CMP Technical Symposivm [C]. Shanghai: SEMICON,2003.85-101.

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