P型(掺硼)晶硅太阳电池的光衰减机制和技术改进措施

Light degradation of B-doped p-type c-Si solar cells and solutions

介绍了近年来对掺硼晶硅(Cz Si和mc Si)太阳电池的光照衰减问题及衰减机制的研究结果。通过光照及退火处理前后少子寿命变化的研究以及光衰减与硼和氧浓度关系的研究,表明引起掺硼晶硅太阳电池光照衰减的主要因素是硼和间隙氧的存在。同时介绍了减小或避免衰减的技术措施。

The investigation of the issues and mechanism of light degradation of B-doped p-type c-Si solar cells in recent years were described. Through the investigation for variations of minor carrier lifetime before and after light irradiation and annealing and the correlation between light degradation and boron and oxygen concentrations, it is clarified that boron and interstitial oxygen are major components of defect center for light degradation of B-doped c-Si solar cells. At same time, the technical solutions for reducing or eliminating light-degradation were introduced as well.