均匀分布锁相列阵半导体激光器的微扰理论

Perturbation Theory of a Uniform Phase-Locked Semiconductor Laser Array

本文从宽接触半导体激光器的简单模型出发,运用微扰理论分析了均匀分布锁相列阵半导体激光器的侧模行为。分析表明,对增益导引、折射率导引锁相列阵,器件一般以N阶模工作,但在增益导引列阵中将会出现大于N的高阶模。反折射率导引均匀分布锁相列阵可获得基侧模工作,其远场由于周期性微扰的作用表现为三瓣,能量主要集中于中心瓣上。

The lateral mode behavior of a uniform phase--locked diode laser array isanalysed in this paper by applying a simple model of broad--area semiconductorlaser and a perturbation theory. It is shown that the array operates in the Nthorder mode in all probability for the conventional gain--guided and index--guidedLD arrys. But higher--order modes (>N) may exist for gain--guided laser array.The fundamental lateral mode will be obtained in uniform anti--index--guided la-ser arrays. Its far--field will be a three--lobe pattern due to the existence of pe-riodic perturbation, and its energy is mainly in the central lobe.