Ⅱ—Ⅵ族宽带隙半导体的分子束外延

Molecular Beam Epitaxial Growth of Ⅱ--Ⅵ Group Wide--Gap Semiconductors

我们用分子束外延法已生长出了ZnSe、ZnTe单晶薄层。外延层的生长速率基本上由分子束流量和衬底温度决定。本文讨论了这种二元化合物的生长速率,包括衬底温度、结晶性及分子束强度,并和实验结果作了比较分析。所获得的生长速率与衬底温度和入射束比的关系能用原子表面覆盖度的动力学方程得到解释。

Single crystalline films of ZnSe, ZnTe have successfully been grown bymolecular beam epitaxy (MBE).The growth rate of the film is essentially dete-rmined by the minority molecular beam flux of the constituent elements. thegrowth rate of binary compounds, including the substrate temperature, thecrystallinity, and the molecular beam intensity are discussed and compared withthe experimental data. The observed growth rate dependence on substrate temp-erature and impinging rates ratio has been explained with the kinetic equationfor the surface coverage of atoms.