摘要
Equilateral triangle semiconductor microcavities with tensile-strained InGaAsP multi-quantum-well as the active region are fabricated by the inductively coupled plasma (ICP) etching technique. The mode characteristics of the fabricated microcavities are investigated by photoluminescence, and enhanced peaks of the photoluminescence spectra corresponding to the fundamental transverse modes are observed for microcavities with side lengths of 5 and 10 um. The mode wavelength spacings measured experimentally coincide very well with those obtained by the theoretical formulae.
Equilateral triangle semiconductor microcavities with tensile-strained InGaAsP multi-quantum-well as the active region are fabricated by the inductively coupled plasma (ICP) etching technique. The mode characteristics of the fabricated microcavities are investigated by photoluminescence, and enhanced peaks of the photoluminescence spectra corresponding to the fundamental transverse modes are observed for microcavities with side lengths of 5 and 10 um. The mode wavelength spacings measured experimentally coincide very well with those obtained by the theoretical formulae.
基金
This work was supported by the National Natural Science Foundation of China under Grant No.60225011, and Major State Basic Research Program under Grant No.G2000036606.
