摘要
采用固相法制备BiFeO_3-x[BSN-G](x=0~5.0wt%)陶瓷样品,研究添加不同量的BSN-G对Bi FeO_3陶瓷微观形貌,电性能及磁性能的影响。研究结果表明:BSN-G的加入使得陶瓷样品气孔率降低,致密度提高。随着x的增加,陶瓷的介电常数和介电损耗呈逐渐降低趋势,当x=5%时,样品在1 k Hz频率下的介电损耗为0.003。此外,添加BSN-G使得BiFeO_3陶瓷的漏导电流降低,x=5%的样品具有饱和的电滞回线,其饱和极化强度PS为1.5μC/cm^2,漏导电流密度J为0.39×10-6A/cm^2。交流阻抗图谱分析表明随着x的增加,样品的电阻呈增大趋势。活化能Ea随x增加而依次降低,进一步说明其损耗呈逐渐降低趋势。随着x的增加,样品的磁性能得到一定改善。
A series of BiFeO_3-x[BSN-G](x=0.0-5.0wt%) ceramic samples were prepared by a solid-state reaction method. The influences of BSN-G doping content on the microstructure,electrical and magnetic property of BiFeO_3 ceramics were investigated. The results indicated that the dielectric constant and losses of the samples were reduced with x increasing and the dielectric loss for x =5% sample was 0. 003 at 1 k Hz. The leakage current could be effectively suppressed with BSN-G doing,which the x = 5% sample showed a saturation ferroelectric hysteresis loop with PS=1. 5 μC / cm^2 and J =0. 39 ×10-6A / cm^2. The impendance spetrosopy indicate that with x increasing the resistance values of the samples were increased. The activation energy for relaxation could be calculated and the Eadecreases as x increasing,which in further to explain the decreased dielectric losses.Additionally,it was confirmed that the magnetic behaviors of the samples were improved with x increasing.
出处
《人工晶体学报》
EI
CAS
CSCD
北大核心
2015年第11期3340-3345,共6页
Journal of Synthetic Crystals
基金
国家自然科学基金(51372144)
陕西省重点科技创新团队(2014KCT-06)