石墨烯/CdTe肖特基结薄膜太阳能电池制备及光电性能研究

Preparation and Photoelectric Properties of Graphene/CdTe Schottky Junction Thin-film Solar Cells

采用气相输运沉积技术(VTD)制备了晶体形状规则、晶粒度较大的p型CdTe半导体吸光层薄膜;通过"直接贴附"转移法,将双层石墨烯(GR)转移到CdTe薄膜表面,制备出了新型的GR/CdTe肖特基结太阳能电池。实验结果表明:"直接贴附"转移法获得的石墨烯透光率高、导电性好,制备得到的GR/CdTe肖特基结太阳能电池的转换效率约为1%,是传统"丙酮湿法"转移法的3倍。

A p-type CdTe light-absorbing layer thin films is successfully prepared by using vapor transport deposition( VTD) technique. It has good crystallization and bigger crystalline grain size. By ' directly attached' transfer method,the bilayer graphene( GR) film was transferred to the surface of CdTe and a new-type GR / CdTe Schottky junction solar cell was prepared. Experimental results reveal that the graphene with ' directly attached ' transfer method has high transmittance,good conductivity. The conversion efficiency of the GR / CdTe Schottky junction solar cell prepared by ' directly attached' transfer method is about 1%,which is 3 times than that by the ' acetone wet' transfer method.