摘要
在半导体InGaAs激光激发Yb:YAG晶体的荧光中,有一组位于460~494nm的可见荧光。分析了这些可见荧光产生的原因,指出它不同于红外荧光的发光机理,是一种离子对的合作吸收和发射。两个离子耦合成的离子对产生的可见荧光,其强度随激发功率的平方变化。提高晶体中离子对的密度,可见荧光可以得到增强。
The series of 460~494 nm visible fluorescence of Yb:YAG crystal were excited by a semiconductor InGaAs laser.The cause of visible fluorescence were analyzed.The mechanism of visible fluorescent is different to infrared fluorescent,it is cooperative absorption and emission of ion pairs.The emission intensities change with excitation power square.By increasing the density of ion pairs in the crystal.More strong visible fluorescence can obtained.
出处
《光电子.激光》
EI
CAS
CSCD
北大核心
2003年第8期889-892,共4页
Journal of Optoelectronics·Laser