碳氮纳米管薄膜及其场致电子发射特性

Carbon Nitride Nanotube Thin Film and Its Field Emission Properties

利用微波等离子体增强化学气相沉积技术,在玻璃衬底上600℃～650℃的低温下制备出了碳氮纳米管薄膜,氮含量为12%,采用扫描电子显微镜(SEM)、X射线光电子谱(XPS)和Raman光谱等测试手段对所制备薄膜的表面形貌、微结构和成分进行了分析,并研究了其场致电子发射特性,阈值电场为3.7V/μm。当电场为8V/μm时,电流密度为413.3μA/cm2。实验表明该薄膜具有优异的场发射性能,而且用这种方法制备的薄膜将大大简化平板显示器件的制作工艺。

Carbon nitride nanotube thin films were prepared on Ni-Cr coated glass substrate by microwave plasma enhanced chemical vapor deposition at a relatively low temperature of 600-650°C. The nitrogen concentration in the film is 12%. The microstructure of the film was examined by SEM, XPS and Raman spectroscopy. The characteristics of field emission of the film were measured. The turn-on field of the film is 3.7 V/μm. The current density is 413.3 μA/cm2 at an electric field of 8 V/μm. The experimental results indicate that this film has a good field emission property. The film prepared by this method will simplify the fabricating process of flat panel display device.